2N3053 Datasheet, PDF (1/2 Pages) Seme LAB – MEDIUM POWER SILICON NPN PLANAR TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3053
DESCRIPTION
·Maximun SOA Curve
·High gain-bandwidth Product
: f_T = 100MHz
·Low Leakage Current
APPLICATIONS
·Designed for audio amplifiers ,controlled amplifiers ,ower supplies, power oscillators and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
60
V
V_CEO
Collector-Emitter Voltage
40
V
V_CER Collector – Emitter Sustaining Voltage
50
V
V_CEX
Collector - Emiiter Voltage
60
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
0.7
A
Collector Power Dissipation@T_A=25℃
1
W
P_C
Collector Power Dissipation@T_C=25℃
5
W
T_J
Junction Temperature
200
℃
T_stg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
R_{th j-c}
Thermal Resistance,Junction to Ambient
Thermal Resistance,Junction to Case
MAX
175
35
UNIT
℃/W
℃/W
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