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| 2N2955HV Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Excellent Safe Operating Area | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2N2955HV
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-
: hFE=20-70@IC= -4A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.1V(Max)@ IC= -4A
·Complement to Type 2N3055HV
APPLICATIONS
·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCER
Collector-Emitter Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-15
A
IB
Base Current
Collector Power Dissipation
PC
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature
-7
A
115
W
200
â
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.52 â/W
isc websiteï¼www.iscsemi.cn
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