2N2219A Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH SPEED SWITCHES

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector Current- I_C= 0.8A
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 40V(Min)
APPLICATIONS
·Designed for general-purpose switching and linear
amplification.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current-Continuous
I_BM
Base Current-Peak
P_C
Collector Power Dissipation@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a} Thermal Resistance,Junction to Ambient
isc Product Specification
2N2219A
VALUE
75
40
6
0.8
0.2
0.8
150
-65~150
UNIT
V
V
V
A
A
W
℃
℃
MAX
187.5
UNIT
K/W
isc Website：www.iscsemi.cn