25N18 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Fast Switching

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·FEATURES
·Drain Current I_D= 25A@ T_C=25℃
·Drain Source Voltage
: V_DSS= 180V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 0.15Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching regulators
·Switching converters, motor drivers, relay drivers
isc Product Specification
25N18
·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_DSS
V_GS
Drain-Source Voltage
Gate-Source Voltage-Continuous
180
V
±20
V
I_D
Drain Current-Continuous
25
A
I_DM
Drain Current-Single Plused
60
A
P_D
Total Dissipation @T_C=25℃
150
W
T_j
Max. Operating Junction Temperature
150
℃
T_stg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
0.83 ℃/W
isc website：www.iscsemi.cn
1 _{isc & iscsemi is registered trademark}
PDF pdfFactory Pro
www.fineprint.cn