20N50 Datasheet, PDF (1/2 Pages) Nell Semiconductor Co., Ltd – N-Channel Power MOSFET

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
20N50
·FEATURES
·Drain Current I_D= 20A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 500V(Min)
·Low ON Resistance R_DS(on) = 0.27Ω(Max)
·Low leakage current
·Fast Switching
·DESCRITION
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
500
V
±30
V
ID
Drain Current-Continuous
20
A
IDM
Drain Current-Single Plused
80
A
PD
Power Dissipation
150
W
T_j
Max. Operating Junction Temperature
150
℃
T_stg
Storage Temperature range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
0.833 ℃/W
Thermal Resistance, Junction to Ambient
50
℃/W
isc website： www.iscsemi.com
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