1N60A Datasheet, PDF (1/2 Pages) Microsemi Corporation – Optimized for Radio Frequency Response

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
1N60A
·FEATURES
·Drain Current I_D= 1.0A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 600V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 12Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching applications in power supplies
·Motor controls,high efficient DC to DC converters
·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_DSS
V_GS
I_D
I_DM
P_D
T_j
T_stg
Drain-Source Voltage
600
V
Gate-Source Voltage-Continuous
±30
V
Drain Current-Continuous
1.0
A
Drain Current-Single Plused
5
A
Total Dissipation @T_C=25℃
34
W
Max. Operating Junction Temperature
150
℃
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
3.13 ℃/W
isc website：www.iscsemi.cn
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