1N60 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – GOLD BONDED GERMANIUM DIODE

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
1N60
·FEATURES
·Drain Current –I_D= 1A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 600V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 8Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
V_DSS
V_GS
I_D
I_DM
P_D
T_j
T_stg
Drain-Source Voltage
Gate-Source Voltage-Continuous
Drain Current-Continuous
Drain Current-Single Plused
Total Dissipation @T_C=25℃
Max. Operating Junction Temperature
Storage Temperature
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
VALUE
600
±20
1
4
28
150
-55~150
UNIT
V
V
A
A
W
℃
℃
MAX
4.5
110
UNIT
℃/W
℃/W
isc website：www.iscsemi.cn
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