1N60-251 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·FEATURES
·Drain Current ID= 1.2A@ TC=25℃
·Drain Source Voltage-
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 11.5Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching applications in power supplies
·Motor controls,high efficient DC to DC converters
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
IDM
Drain Current-Single Plused
PD
Total Dissipation @TC=25℃
Tj
Max. Operating Junction Temperature
Tstg
Storage Temperature
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance, Junction to Case
isc Product Specification
1N60
VALUE
600
±30
1.2
4.8
40
150
-55~150
UNIT
V
V
A
A
W
℃
℃
MAX
4
UNIT
℃/W
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}