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| 18N65 Datasheet, PDF (1/2 Pages) Unisonic Technologies – 18A, 650V N-CHANNEL POWER MOSFET | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·FEATURES
·Drain Current ID= 18A@ TC=25â
·Drain Source Voltage
: VDSS= 650V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.4Ω(Max)
·APPLICATIONS
·Switching applications
·Switching converters, motor drivers, relay drivers
isc Product Specification
18N65
·ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
650
V
±20
V
ID
Drain Current-Continuous
18
A
IDM
Drain Current-Single Plused
45
A
PD
Total Dissipation @TC=25â
300
W
Tj
Max. Operating Junction Temperature
150
â
Tstg
Storage Temperature
-55~150 â
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