18N60 Datasheet, PDF (1/2 Pages) Unisonic Technologies – POLARHV HIPERFET POWER MOSFET

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
18N60
·FEATURES
·Drain Current I_D= 18A@ T_C=25℃
·Drain Source Voltage
: V_DSS= 600V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 0.4Ω(Max)
·Fast Switching
·APPLICATIONS
·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_DSS
V_GS
Drain-Source Voltage
Gate-Source Voltage-Continuous
600
V
±30
V
I_D
Drain Current-Continuous
18
A
I_DM
Drain Current-Single Plused
45
A
P_D
Total Dissipation @T_C=25℃
360
W
T_j
Max. Operating Junction Temperature
150
℃
T_stg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
0.35 ℃/W
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