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| 15N06 Datasheet, PDF (1/2 Pages) Unisonic Technologies – N -CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
15N06
·FEATURES
·Drain Current ID= 15A@ TC=25â
·Drain Source Voltage-
: VDSS= 60V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.14Ω(Max)
·Fast Switching
·APPLICATIONS
·Switch regulators
·Switching converters motor drivers and relay drivers
·ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
60
V
±15
V
ID
Drain Current-Continuous
15
A
IDM
Drain Current-Single Plused
40
A
PD
Total Dissipation @TC=25â
75
W
Tj
Max. Operating Junction Temperature
150
â
Tstg
Storage Temperature
-55~150 â
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