12N65 Datasheet, PDF (1/2 Pages) Unisonic Technologies – 12A, 650V N-CHANNEL POWER MOSFET

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
12N65
·FEATURES
·Drain Current –I_D= 12A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 650V (Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 0.85Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
650
V
±30
V
ID
Drain Current-Continuous
12
A
IDM
Drain Current-Single Plused
48
A
PD
Total Dissipation @TC=25℃
225
W
T_j
Max. Operating Junction Temperature
150
℃
T_stg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.56 ℃/W
62.5 ℃/W
isc website： www.iscsemi.com
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