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10N70 Datasheet, PDF (1/2 Pages) Unisonic Technologies – 10A, 700V N-CHANNEL POWER MOSFET | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
10N70
·FEATURES
·Drain Current âID= 10A@ TC=25â
·Drain Source Voltage-
: VDSS= 700V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.2Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
ID
IDM
PD
Tj
Tstg
Drain-Source Voltage
700
V
Gate-Source Voltage-Continuous
±20
V
Drain Current-Continuous
10
A
Drain Current-Single Plused
40
A
Total Dissipation @TC=25â
150
W
Max. Operating Junction Temperature
150
â
Storage Temperature
-55~150 â
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.83 â/W
40 â/W
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