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10N70-3PN Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – N-Channel MOSFET Transistor | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
10N70
·FEATURES
·Drain Current âID= 10A@ TC=25â
·Drain Source Voltage-
: VDSS= 700V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.2Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
700
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
10
A
IDM
Drain Current-Single Plused
40
A
PD
Total Dissipation @TC=25â
150
W
Tj
Max. Operating Junction Temperature
150
â
Tstg
Storage Temperature
-55~150 â
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.83 â/W
Rth j-a Thermal Resistance, Junction to Ambient
40
â/W
isc websiteï¼www.iscsemi.com
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