10N12-TO3 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – N-Channel Mosfet Transistor

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
10N12
·FEATURES
·Drain Current –ID= 10A@ TC=25℃
·Drain Source Voltage-
: VDSS= 120V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.3Ω(Max)
·SOA is Power-Dissipation Limited
·Nanosecond Switching Speeds
·High Input Impedance
·DESCRITION
·Designed for switching converters,motor dirvers,relay dirvers
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
120
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
10
A
IDM
Drain Current-Single Plused
25
A
PD
Total Dissipation @TC=25℃
75
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.6 ℃/W
isc website：www.iscsemi.com
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