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VLA567-01R Datasheet, PDF (5/9 Pages) Isahaya Electronics Corporation – Low height, DIP structure
DEFFINITION OF CHARACTERISTICS
(1)SWITCHING OPERATION
VI
HYBRID IC
VLA567-01R
DRIVER FOR IGBT MODULES
(2)OPERATION OF SHORT CIRCUIT PROTECTION
VI 0V
VO
tr
tPLH
tf
tPHL
90%
50%
10%
VO 0V
-5V
Fo
0V
ttrip1,2
ttimer
10V
10V
APPLICATION EXAMPLE
VIN : 5V
Gate signal 1
VD : 15V
HC04 etc.
GND
Gate signal 2
HC04 etc.
GND
40
41
42
44
43 VLA567‐01R
1
4
5
4.7kohm
29
23
4.7kohm
RG1
26
25 +
C1
28
+
C2
27
Ctrip1
24
30
DZ1
Cs1
PC1
D1
D2
22
RG2
19
20 +
C3
17
+
C4
18
Ctrip2
21
15
DZ4
Cs2
4.7kohm
DZ2,3
DZ5,6
P
IGBT
module
N
16
PRECAUTION
4.7kohm
PC2
(1) Voltage compensate capacitors are expected to be located as close as
possible from the hybrid IC.
VD=15V +/-5%
VIN= 5V +/-5%
(2) D1 requires approximately the same voltage of power modules.
C1 ~ 4=100μF 50V(Low impedance)
(3) If reverse recovery time of D1 (D2) is long, pin23 (pin22) is applied high voltage.
In that case, counterplan for protection which insert zener diode between
pin 18 and 22 (pin 27 and 23) is necessary like above diagram.
(4) In case pin 21 or 24 are operating, the Ctrip is expected to be wired as close as
possible from pin. (Less than 5cm coming and going)
※In case of not operating, please pin 21 or 24 are open.
(5) Minimize the area of closed circuit of gate circuit and input gate signal circuit
so as not to be affected by induction noise.
(6) When the built in short-circuit protection circuit need not be used,
Ctrip1,2 : Depended on RG1,2
(Please refer to the
“ ttrip-Ctrip CHARACTERISTICS “ in page3)
Cs1,2 : Please refer to the
“ ts-Cs CHARACTERISTICS “ in page6)
Z1,4 : 30V
DZ2,3,5,6 : 18V
D1,2 : First recovery diode( trr : 0.2μs max )
RP1H(Sanken) etc.
PC1,2:TLP785(TOSHIBA) etc.
please connect resistance of 4.7k ohm between pin 17 and 22 (pin 23 and 28).
At that time, D1 (D2) and Dz1 (DZ4) are not require, and pin 16 and 29 are not
necessary to be connected.
(7) Pin 1 and 42 are for test pin, so pin 1 and 42 are not to be connected electrically to other line.
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