RT3TDDU Datasheet, PDF (3/5 Pages) Isahaya Electronics Corporation – Composite Transistor With Resistor

RT3TDDU
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25℃) (Tr1,Tr2 common)
Symbol
Parameter
Test conditions
Min
V(BR)CEO Collector to Emitter break down voltage ^I C^{=100µA，R}BE^=∞
50
ICBO
Collector cut off current
VCB=50V，I E =0
hFE
DC forward current gain
VCE=5V，I C=10mA
80
VCE(sat)
Collector to Emitter saturation voltage
I C=10mA，I B=0.5mA
VI(ON)
Input on voltage
VCE=0.2V，I C=5mA
VI(OFF)
Input off voltage
VCE=5V，I C=100µA
0.5
R1
Input resistor
1.5
R2/R1
fT
Resistor ratio
Gain band width product
17
Tr1 VCE=6V，I E=-10mA
Tr2 VCE=-6V，I E=10mA
TYPICAL CHARACTERISTICS (Tr1)
Limits
Typ
0.1
0.7
0.6
2.2
22
200
150
Max
0.1
0.3
1.1
2.9
26
Unit
V
µA
-
V
V
V
KΩ
-
MHZ
INPUT ON VOLTAGE
VS.COLLECTOR CURRENT
10
V_CE=0.2V
1000
DC FORWARD CURRENT GAIN
VS.COLLECTOR CURRENT
V_CE=5V
1
100
0.1
1
10
100
COLLECTOR CURRENT　Ｉ _Ｃ（ｍＡ）
1000
COLLECTOR CURRENT
VS.INPUT OFF VOLTAGE
V_CE=5V
10
1
10
100
COLLECTOR CURRENT　Ｉ_Ｃ（ｍＡ）
100
10
0
0.4
0.8
1.2
1.6
2
INPUT OFF VOLTAGE　Ｖ_{Ｉ（ＯＦＦ）}（Ｖ）
ISAHAYA ELECTRONICS CORPORATION