RTGN131AP Datasheet, PDF (2/4 Pages) Isahaya Electronics Corporation – TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE

〈SMALL-SIGNAL TRANSISTOR〉
RTGN131AP
TRANSISTOR WITH RESISTOR
FOR SWITHING APPLICATION
SILICON NPN EPITAXIAL TYPE
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Parameter
I_CBO
V_OL
V_IL
hFE1
hFE2
hFE3
R₁
R₂
Collector cut off current
Output voltage
Input voltage (OFF)
DC forward current gain
DC forward current gain
DC forward current gain
Input resistor
Emitter – Base resistor
Test conditions
V_CB=40V，IE=0
VI=5V，I_C=0.4A
V_CE=5V，I_C=100μA
V_CE=2V，I_C=0.1A
V_CE=2V，I_C=0.5A
V_CE=2V，I_C=1A
―
―
Limits
Min Typ Max
―
―
0.1
―
― 0.35
0.3
―
―
80
―
―
200
―
―
200
―
―
0.7
1
1.3
0.7
1
1.3
Unit
uA
V
V
―
―
―
KΩ
KΩ
ISAHAYA ELECTRONICS CORPORATION