RT3P55M Datasheet, PDF (2/3 Pages) Isahaya Electronics Corporation – Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type

ELECTRICAL CHARACTERISTICS (Ta=25℃) (RTr1, RTr2)
Symbol
Parameter
Test conditions
V(BR)CEO
ICBO
hFE
VCE(sat)
VI(ON)
VI(OFF)
R1
R2/R1
fT
Collector to Emitter break down voltage
Collector cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input on voltage
Input off voltage
Input resistor
Resistor ratio
Gain band width product
I C=-100µA，RBE=∞
VCB=-50V，I E =0
VCE=-5V，I C=-5mA
I C=-10mA，I B=-0.5mA
VCE=-0.2V，I C=-5mA
VCE=-5V，I C=-100µA
VCE=-6V，I E=10mA
RT3P55M
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
Limits
Unit
Min
Typ
Max
-50
－
－
V
－
－
-0.1
µA
50
－
－
-
－
-0.1
-0.3
V
－
-1.0
-1.8
V
-0.4
-0.7
－
V
7
10
13
KΩ
4.2
4.7
5.1
-
－
150
－ MHz
TYPICAL CHARACTERISTICS (RTr1,RTr2)
1000
DC FORWARD CURRENT GAIN
VS COLLECTOR CURRENT
VCE=-5V
INPUT ON VOLTAGE
VS COLLECTR CURRENT
-10
VCE=-0.2V
100
-1
10
1
-0.1
-1
-10
COLLECTOR CURRENT　IC(mA)
-1000
COLLECTOR CURRENT
VS INPUT OFF VOLTAGE
VCE=-5V
-100
-0.1
-1
-10
-100
COLLECTOR CURRENT　IC(mA)
-100
-10
-0.0
-0.5
-1.0
-1.5
-2.0
INPUT OFF VOLTAGE VI(off) (V)
ISAHAYA ELECTRONICS CORPORATION