RT3J33M Datasheet, PDF (2/4 Pages) Isahaya Electronics Corporation – Composite Transistor

PRELIMINARY
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol
Parameter
Test conditions
V(BR)DSS
IGSS
IDSS
Vth
| Yfs |
RDS(ON)
Ciss
Coss
tON
tOFF
Drain-source breakdown voltage
Gate-source leak current
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Static drain-source on-state resistance
Input capacitance
Output capacitance
Switching time
I _D=-100μA, V_GS=0V
V _GS=±5V, V_DS=0V
V _DS=-20V ,V_GS=0V
I _D=-250μA, V _DS= V _GS
V _DS=-10V, I _D=-0.1A
I _D=-100mA, V _GS=-4.0V
V _DS=-10V, V _GS=0V,f=1MHz
V _DS=-10V, V _GS=0V,f=1MHz
V _DD=-5V , I _D=-10mA
V _GS=0～-5V
RT3J33M
Composite Transistor
For high speed switching
Silicon ï¼°-channel MOSFET
Limits
Unit
Min
Typ
Max
-20
-
-
V
-
- ±0.5 μA
-
-
-50 μA
-0.6
-
-1.2 V
-
280
- mS
-
2
-
Ω
-
37
-
pF
-
12
-
pF
-
16
-
ns
-
110
-
Switching time test condition
test circuit
0
IN
-5V
50Ω
10μs
VDD=-5V
D.U.≦1%
Common source
Ta=25℃
OUT
0V
input
RL _waveform
VDD
-5V
VDS(ON）
output
waveform
VDD
10%
90%
90%
10%
tr
tf
ton
toff
ISAHAYA ELECTRONICS CORPORATION