RT2N63M Datasheet, PDF (2/4 Pages) Isahaya Electronics Corporation – Composite Transistor For Muting Application Silicon NPN Epitaxial Type

Electrical characteristics（Ta=25℃）
Symbol
Parameter
V_CBO
VEBO
VCEO
ICBO
IEBO
ｈＦＥ
VCE(sat)
R1
fT
Ron
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Input resistance
Transition frequency
Output On-resistance
Test conditions
ＩC=50μA , IE=0mA
IE=50μA , C=0mA
IC=1mA , RBE=∞
VCB=40V , IE=0mA
V_EB=40V , IC=0mA
VCE=5V , IC=-10mA
IC=10mA , IB=0.5mA
-
V _CE=10V, I _E=-10mA, f=100MHz
V _I=5V, f=1MHz
RT2N63M
Composite Transistor
For Muting Application
Silicon NPN Epitaxial Type
Limits
Min Typ Max
40
40
20
0.5
0.5
820
2500
10
3.29 4.7 6.11
38
0.80
Unit
V
V
V
μA
μA
-
mV
KΩ
MHz
Ω
TYPICAL CHARACTERISTICS (Tr1、Tr2)
Input on voltage - collector current
100
Ta=25℃
VCE=0.2V
10
1
1000
collector current - Input on voltage
Ta=25℃
VCE=5V
100
0.1
0.1
1
10
100
collector current IC (mA)
1000
10
0
0.2
0.4
0.6
0.8
1
Input off voltage VI(OFF) (V)
ISAHAYA ELECTRONICS CORPORATION