RT1N237X Datasheet, PDF (2/3 Pages) Isahaya Electronics Corporation – Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type

ＲＴ１Ｎ２３７Ｘ SERIES
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
MAXIMUM RATING (Ta=25℃)
SYMBOL
PARAMETER
Ｖ_{ＣＢＯ}
Ｖ_{ＥＢＯ}
Ｖ_{ＣＥＯ}
Ｉ_Ｃ
Ｉ _ＣＭ
ï¼°_ï¼£
Ｔｊ
Ｔｓｔｇ
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1N237T
125 （※ ）
+125
-55～+125
RT1N237U
10
RATING
RT1N237M
50
6
50
100
200
RT1N237C
+150
-55～+150
RT1N237S
450
UNI
T
V
V
V
mA
mA
mW
℃
℃
（※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
PARAMETER
Ｖ_{（ＢＲ）ＣＥＯ}
Ｉ _{ＣＢＯ}
ｈ_ＦＥ
Ｖ_{ＣＥ（ｓａｔ）}
Ｖ_{Ｉ（ＯＮ）}
Ｖ_{Ｉ（ＯＦＦ）}
Ｒ_１
Ｒ_２／Ｒ_１
ｆ_Ｔ
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
TYPICAL CHARACTERISTICS
TEST CONDITION
I _C=100μA，R_BE=∞
V_CB=50V，I _E =0
V_CE=5V，I _C =10mA
I _C =10mA，I _B =0.5mA
V_CE=0.2V，I _C =5mA
V_CE=5V，I _C =100μA
V_CE=6V，I _E =-10mA
LIMIT
MIN TYP
50
80
0.7
0.5
0.6
1.5
2.2
22
200
INPUT ON VOLTAGE
VS.COLLECTOR CURRENT
10
V_CE=0.2V
1000
DC FORWARD CURRENT GAIN
VS.COLLECTOR CURRENT
V_CE=5V
MAX
0.1
0.3
1.1
2.9
UNIT
V
μA
－
V
V
V
kΩ
MHz
1
100
0.1
1
10
100
COLLECTOR CURRENT　Ｉ _Ｃ（ｍＡ）
1000
COLLECTOR CURRENT
VS.INPUT OFF VOLTAGE
V_CE=5V
10
1
10
100
COLLECTOR CURRENT　Ｉ_Ｃ（ｍＡ）
100
10
0
0.4
0.8
1.2
1.6
2
INPUT OFF VOLTAGE　Ｖ_{Ｉ（ＯＦＦ）}（Ｖ）
ISAHAYA ELECTRONICS CORPORATION