MC961_13 Datasheet, PDF (2/3 Pages) Isahaya Electronics Corporation – FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE

〈DIODE〉
MC961
FOR HIGH SPEED SWITCHING APPLICATION
SILICON EPITAXIAL TYPE(COMMON ANODE)
REVERSE RECOVERY TIME(trr)TEST CIRCUIT
PULSE GENERATER
（Zout=50Ω)
0.02μF
D.U.T
TRIGGER
SAMPLING
OSCILLOSCOPE
(Zin=50Ω)
DC POWER
SUPPLY
+ ^3kΩ
-
Ｉ_F=10mA, V_R=6V
R_L=50Ω
trr=0.1Ir REVERSE RECOVERY
TIME FOR 0.1Ir
●INPUT VOLTAGE WAVE FORM
V_F
0
V_R
●CURRENT WAVE FORM IN DIODE
I_F
0
I_r
0.1I_r
trr
TYPICAL CHARACTERISTICS
FORWARD CURRENT
VS. FORWARD VOLTAGE
100
Ta=75℃
10
Ta=25℃
Ta=0℃
1
1000
100
10
1
REVERSE CURRENT
VS. REVERSE VOLTAGE
Ta=75℃
Ta=25℃
Ta=0℃
0.1
0.2
0.4
0.6
0.8
1
1.2
FORWARD VOLTAGE VF (V)
PIN CAPACITANCE
VS. REVERSE VOLTAGE
10
1
0.1
1
10
100
REVERSE VOLTAGE VR (V)
0.1
0
10
10
20
30
40
50
REVERSE VOLTAGE VR (V)
REVERSE RECOVERY TIME
VS. FORWARD CURRENT
8
6
4
2
0
0
20
40
60
80
100
FORWARD CURRENT IF(mA)
ISAHAYA ELECTRONICS CORPORATION