ISA1530AC1_13 Datasheet, PDF (2/4 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

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TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION
VS AMBIENT TEMPERATURE
250
200
150
100
50
0
0
50
100
150
AMBIENT TEMPERATURE Ta(℃)
COLLECTOR TO EMITTER SATURATION VOLTAGE
VS COLLECTOR CURRENT
-1000
IC/IB=10
-100
Ta=100℃
Ta=25℃
Ta=-40℃
〈SMALL-SIGNAL TRANSISTOR〉
ISA1530AC1 ISA1603AM1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
COMMON EMITTER OUTPUT
-50
IB=-0.2mA
-40
-30
-20
IB=-0.18mA
IB=-0.16mA
IB=-0.14mA
IB=-0.12mA
IB=-0.10mA
IB=-0.08mA
IB=-0.06mA
IB=-0.04mA
-10
IB=-0.02mA
-0
-0
IB=0mA
-1
-2
-3
-4
-5
COLLECTOR・EMITTER VOLTAGE VCE(V)
-10.0
BASE TO EMITTER SATURATION VOLTAGE
VS COLLECTOR CURRENT
IC/IB=10
Ta=100℃ Ta=25℃ Ta=-40℃
-1.0
-10
-0.1
-1
-10
-100
COLLECTOR CURRENT IC(mA)
COMMON EMITTER TRANSFER
-1
VCE=-6V
-0.8
Ta=100℃
-0.6
Ta=25℃
-0.4
Ta=-40℃
-1000
-0.2
-0.1
-0.1
-1
-10
-100
COLLECTOR CURRENT IC(mA)
COMMON EMITTER TRANSFER
-100
-80
VCE=-6V
-1000
-60
Ta=100℃
-40
Ta=25℃
Ta=-40℃
-20
-0
-0
-0.2
-0.4
-0.6
-0.8
-1
BASE TO EMITTER VOLTAGE VBE(V)
-0
-0
-0.2
-0.4
-0.6
-0.8
-1
BASE TO EMITTER VOLTAGE VBE(V)
ISAHAYA ELECTRONICS CORPORATION