INK0001AX_08 Datasheet, PDF (2/4 Pages) Isahaya Electronics Corporation – High speed switching Silicon N-channel MOSFET

ＩＮＫ0001AＸ SERIES
High speed switching
Silicon N-channel MOSFET
MAXIMUM RATING（Ｔａ＝２５℃）
SYMBOL
PARAMETER
Ｖ_DSS
Ｖ_GSS
Ｉ_D
Ｐ_Ｄ
ï¼´ch
Ｔｓｔｇ
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
（Ta=25℃）
Channel temperature
Range of Storage temperature
INK0001AT2
125（※）
+125
-55～+125
RATING
INK0001AU1 INK0001AM1
50
±8
100
INK0001AC1
150
200
+150
-55～+150
UNIT
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS（Ｔａ＝２５℃）
※package mounted on 9mm×19mm×1mm glass-epoxy substrate.
SYMBOL
PARAMETER
TEST CONDITION
V(BR)DSS
IGSS
IDSS
Vth
| Yfs |
RDS(ON)
Ciss
Coss
tON
tOFF
Drain-source breakdown voltage
Gate-source leak current
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Static drain-source on-state
resistance
Input capacitance
Output capacitance
Switching time
I _D=100μA, V _GS=0V
V _GS=±5V, V_DS=0V
V _DS=50V ,V_GS=0V
I _D=250μA, V _DS= V _GS
V _DS=10V, I _D=0.1A
I _D=100mA, V _GS=4.0V
V _DS=10V, V _GS=0V,f=1MHz
V _DS=10V, V _GS=0V,f=1MHz
V _DD=5V , I _D=10mA
V _GS=0～5V
LIMIT
MIN TYP MAX
UNIT
50
-
-
V
-
- ±0.5 μA
-
-
1.0
μA
0.6
-
1.2
V
-
250
-
mS
-
3.5
-
Ω
-
24
-
pF
-
5
-
pF
-
11
-
ns
-
50
-
Switching time test condition
test circuit
5V
IN
0
50Ω
10μs
VDD=5V
D.U.≦1%
Common source
Ta=25℃
OUT
5V
input
RL _waveform
VDD
0V
VDD
output
waveform
VDS(ON）
10%
90%
10%
90%
tr
ton
tf
toff
ISAHAYA ELECTRONICS CORPORATION