INA5003AH1 Datasheet, PDF (2/3 Pages) Isahaya Electronics Corporation – SILICON PNP EPITAXIAL TYPE

PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
TYPICAL CHARACTERISTICS
IC-VBE
-10.00
Ta=25℃
-1.00
-0.10
-0.01
-0.0
-0.4
-0.8
-1.2
-1.6
BASE TO EMITTER VOLTAGE : VBE[V]
1000
hFE-IC
100
<TRANSISTOR>
INA5003AH1
SILICON PNP EPITAXIAL TYPE
IC-VCE
50mA 40mA
-5
30mA
-4
20mA
-3
-2
IB=10mA
-1
Ta=25℃
0
0
-1
-2
-3
-4
-5
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
-10.00
-1.00
VCE(sat)-IC
VBE(sat)-IC
VBE(sat)
IC/IB=20
IC/IB=20
Ta=25℃
10
VCE=2V
Ta=25℃
1
-0.01
-0.10
-1.00
COLLECTOR CURRENT : IC[A]
-10.00
fT-IE
1000
VC_VE_C=_E1₌0₁V_0V
Ta=25℃
100
-0.10
VCE(sat)
-0.01
-0.01
-0.10
-1.00
-10.00
COLLECTOR CURRENT : IC[A]
Cob-VCE
1000
IE=0A, f=1MHz
Ta=25℃
100
10
10
1
0.00
0.01
0.10
1.00
EMITTER CURRENT : IE[A]
1
-0.1
-1.0
-10.0
-100.0
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
ISAHAYA ELECTRONICS CORPORATION