RTGN426AP Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE

〈SMALL-SIGNAL TRANSISTOR〉
RTGN426AP
TRANSISTOR WITH RESISTOR
FOR SWITHING APPLICATION
SILICON NPN EPITAXIAL TYPE
DISCRIPTION
RTGN426AP is a one chip transistor with
built-in bias transistor.
FEATURE
● Built-in bias resistor （R1=0.47kΩ,R2=4.7kΩ）
● High collector current IC=1A
● Built-in zener diode between collector and base
APPLICATION
Motor driver circuit
OUTLINE DRAWING
4.6 MAX
1.6
Unit：mm
1.5
0.8 MIN
2.5 ^{4.2 MAX}
E CB
0.53
MAX
1.5
3.0
0.4
0.48 MAX
MARKING
EQUIVALENT CIRCUIT
C
B
R1
R2
E
TERMINAL CONNECTOR
ï¼¥: EMITTER
ï¼£: COLLECTOR
ï¼¢: BASE
JEDEC :
MARKING
A part of EIAJ standard
ND
The last number Marking month
of fisical year
Running No.
MAXIMUM RATING（Ta=25℃）
SYMBOL
PARAMETER
VCBO
Collector to Base voltage
VEBO
VCEO
IC
Emitter to Base voltage
Collector to Emitter voltage
Collector current (DC)
ICM
Collector current (pulse)
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
RATING
60±10
10
60±10
1
2
500
＋150
-55～＋150
UNIT
V
V
V
A
A
mW
℃
℃
ISAHAYA ELECTRONICS CORPORATION