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RTGN226AP Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE | |||
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ãSMALL-SIGNAL TRANSISTORã
RTGN226AP
TRANSISTOR WITH RESISTOR
FOR SWITHING APPLICATION
SILICON NPN EPITAXIAL TYPE
DISCRIPTION
RTGN226AP is a one chip transistor with
built-in bias transistor.
FEATURE
â Built-in bias resistor ï¼R1=0.22kâ¦,R2=2.2kâ¦ï¼
â High collector current IC=1A
â Built-in zener diode between collector and base
APPLICATION
Motor driver circuit
OUTLINE DRAWING
4.6 MAX
1.6
Unitï¼mm
1.5
0.8 MIN
2.5 4.2 MAX
E CB
0.53
MAX
1.5
3.0
0.4
0.48 MAX
MARKING
EQUIVALENT CIRCUIT
C
B
R1
R2
E
TERMINAL CONNECTOR
ï¼¥: EMITTER
ï¼£: COLLECTOR
ï¼¢: BASE
JEDEC :
MARKING
A part of EIAJ standard
NF
The last number Marking month
of fisical year
Running No.
MAXIMUM RATINGï¼Ta=25âï¼
SYMBOL
PARAMETER
VCBO
Collector to Base voltage
VEBO
VCEO
IC
Emitter to Base voltage
Collector to Emitter voltage
Collector current (DC)
ICM
Collector current (pulse)
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
RATING
60±10
10
60±10
1
2
500
ï¼150
-55ï½ï¼150
UNIT
V
V
V
A
A
mW
â
â
ISAHAYA ELECTRONICS CORPORATION
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