RTGN141AP Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE

PRELIMINARY
ʪSMALL-SIGNAL TRANSISTORʫ
RTGN141AP
TRANSISTOR WITH RESISTOR
FOR SWITHING APPLICATION
SILICON NPN EPITAXIAL TYPE
DISCRIPTION
RTGN141AP is a one chip transistor with
built-in bias transistor.
OUTLINE DRAWING

."9

Unitɿmm

FEATURE
˔
Built-in bias resistor
ʢR1=10kΩ,R2=10kΩʣ
˔
High collector current IC=1A
˔
Built-in zener diode between collector and base
APPLICATION
Motor driver circuit

















^{EQUIVALENT CIRCUIT}




$




#


3




3


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.*/
 ^
."9
& $#


."9




."9
MARKING
TERMINAL CONNECTOR
̚: EMITTER
̘: COLLECTOR
̗: BASE
JEDEC :



^MARKING


"
QBSU
PG
&*"+
TUBOEBSE




/
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5IF
MBTU
OVNCFS
.BSLJOH
NPOUI

PG
GJTJDBM
ZFBS






3VOOJOH
/P

MAXIMUM RATINGʢTa=25ˆʣ
SYMBOL
PARAMETER
VCBO
Collector to Base voltage
VEBO
VCEO
IC
Emitter to Base voltage
Collector to Emitter voltage
Collector current (DC)
ICM
Collector current (pulse)
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature


RATING
60±10
10
60±10
1
2
500
Ê´150
-55ʙʴ150
UNIT
V
V
V
A
A
mW
ˆ

ˆ

ISAHAYA ELECTRONICS CORPORATION