RTE13LFM Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – Composite Transistor Zener Diode Silicon NPN Epitaxial Type

PRELIMINARY
RTE13LFM
Composite Transistor
Zener Diode
Silicon NPN Epitaxial Type
DESCRIPTION
OUTLINE DRAWING
2.1
RTE13LFM is compound transistor built with 2SC3052 chip
1.25
and 8.2V Zener diode in SC-88 package.
①
FEATURE
Silicon epitaxial type
②
Each transistor elements are independent.
③
Mini package for easy mounting
Unit：mm
⑥
⑤
④
APPLICATION
Power supply circuit, Driver circuit, etc
⑥
⑤
④
Di
Tr
①
②
③
電極接続
①：ANODE
②：ＮＣ
③：COLLECTOR
④：EMITTER
⑤：BASE
⑥：CATHODE
JEITA：SC-88
JEDEC：－
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Total power dissipation（Ta=25℃）
Junction temperature
Storage temperature
RATING
50
50
Tr
6
200
Tr
150
Di
+150
Common _{-55～+150}
UNIT
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS（Ta=25℃）
【 Tr 】
SYMBOL
PARAMETER
TEST CONDITIONS
V(BR)CEO Collector to Emitter break down voltage
IC=100µA, RBE=∞
ICBO
Collector cut off current
VCB=50V, IE=0A
IEBO
Emitter cut off current
VEB=6V, IC=0A
hFE
DC forward current gain
VCE=6V, IC=1mA
hFE
DC forward current gain
VCE=6V, IC=0.1mA
VCE(sat) Collector to Emitter saturation voltage
IC=100mA, IB=10mA
fT
Gain band width product
VCE=6V, IE=-10mA
Cob
Collector output capacitance
VCB=6V, IE=0A, f=1MHz
【 Di 】
Zener voltage VZ(V)
Reverse current IR(µA)
MIN
MAX
IZ(mA)
MAX
VR(V)
7.790
8.610
5
0.5
6.5
MARKING
⑥⑤④
X01
①②③
LIMITS
MIN
TYP
MAX
50
-
-
-
-
0.1
-
-
0.1
250
-
500
90
-
-
-
-
0.3
-
200
-
-
2.5
-
ISAHAYA ELECTRONICS CORPORATION
UNIT
V
µA
µA
-
-
V
MHz
pF