RTE13J1M Datasheet, PDF (1/6 Pages) Isahaya Electronics Corporation – Composite Transistor Zener Diode Silicon P-channel MOSFET

PRELIMINARY
RTE13J1M
Composite Transistor
Zener Diode
Silicon P-channel MOSFET
DESCRIPTION
OUTLINE DRAWING
RTE13J1M is compound transistor built with correspond
2.1
INJ0001AX chip and 8.2V Zener diode in SC-88 package.
1.25
①
FEATURE
Silicon epitaxial type
②
Each transistor elements are independent.
Mini package for easy mounting
③
Unit：mm
⑥
⑤
④
APPLICATION
Power supply circuit, Driver circuit, etc
⑥⑤④
Di
MOSFET
①②③
電極接続
①：ANODE
②：ＮＣ
③：DRAIN
④：SOURCE
⑤：GATE
⑥：CATHODE
JEITA：SC-88
JEDEC：－
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
RATING
UNIT
VDSS
Drain-source voltage
-50
V
VGSS
ID
Gate-source voltage
Drain current(DC)
±8
V
MOSFET
-100
mA
IDP
Drain current(Pulse)
-400(*1)
mA
PT
Total power dissipation（Ta=25℃）
150(*2)
mW
MOSFET
Tj
Junction temperature
Di
+150
℃
Tstg
Storage temperature
Common
-55～+150
℃
*1：Pw≦10μs, Duty cycle≦1% *2：Mounted on glass epoxy board(9mm×19mm×1mm)
MARKING
⑥⑤ ④
X03
①②③
ISAHAYA ELECTRONICS CORPORATION