RTBN14BAP1 Datasheet, PDF (1/2 Pages) Isahaya Electronics Corporation – TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE

PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
DESCRIPTION
RTBN14BAP1 is a one chip transistor
with built-in bias transistor.
FEATURE
・Built-in bias resistor （R2=10kΩ）
・High collector current （IC=1A）
・Small package for easy mounting.
APPLICATION
Switching.
EQUAIVALENT CIRCUIT
C
B
R1
R2
E
〈SMALL-SIGNAL TRANSISTOR〉
RTBN14BAP1
TRANSISTOR WITH RESISTOR
FOR SWITHING APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
UNIT：mm
4.6 MAX
1.5
1.6
E ^CB
0.53
MAX
1.5
3.0
0.4
0.48 MAX
マーキング
MARKING
TER電MIN極A接L C続ONNECTOR
E：EM_ＥI_:T_エTE_ミR_ッタ
C：C^ＣO^:LL^コE^レCT^クO^タR
Ｂ: ベース
B：BASE
JEITA:SC-62
EJ_{JEIAEDJDEEC: C}S:_:C_S-_O6_T2_-89
JEDEC：―
MAXIMUM RATING（Ta=25℃）
SYMBOL
PARAMETER
V_CBO Collector to Base voltage
V_EBO
Emitter to Base voltage
V_CEO Collector to Emitter voltage
RATING
80
10
60
MARKING
UNIT
Type Name
V
V
V
NP
I_C
Collector current
1
A
I _CM
Peak collector current
2
A
P_CM
Collector dissipation(Ta=25℃)
500
mW
T_j
Junction temperature
T_stg
Storage temperature
＋150
℃
-55～＋150
℃
The last number Marking month
of fisical year
Running No.
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
MIN TYP MAX
UNIT
I_CBO
Collector cut off current
V_CE=60V，I_E=0
―
―
0.1 μA
V_CE(sat) Collector to Emitter saturation voltage
I_B=7mA，I_C=0.7A
―
―
0.4
V
VI(off) Input off voltage
V_CE=5V，I_C=100μA
0.3
―
―
V
ｈＦＥ1 DC forward current gain1
V_CE=2V，I_C=0.1A
200 ―
―
―
ｈＦＥ2 DC forward current gain2
V_CE=2V，I_C=0.5A
300 ―
―
―
ｈＦＥ3 DC forward current gain3
V_CE=2V，I_C=1A
200 ―
―
―
R2
Emitter-base resistor
―
7
10
13
ｋΩ
ISAHAYA ELECTRONICS CORPORATION