RTBN141AP1 Datasheet, PDF (1/2 Pages) Isahaya Electronics Corporation – TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE

PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
DESCRIPTION
RTBN141AP1 is a one chip transistor
with built-in bias transistor.
FEATURE
・Built-in bias resistor （R1=10kΩ,R2=10kΩ）
・High collector current （IC=1A）
・Small package for easy mounting.
APPLICATION
Switching.
EQUAIVALENT CIRCUIT
C
B
R1
R2
E
〈SMALL-SIGNAL TRANSISTOR〉
RTBN141AP1
TRANSISTOR WITH RESISTOR
FOR SWITHING APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
UNIT：mm
4.6 MAX
1.5
1.6
E ^CB
0.53
MAX
1.5
3.0
0.4
0.48 MAX
マーキング
MARKING
TER電MIN極A接L C続ONNECTOR
E：EM_ＥI_:T_エTE_ミR_ッタ
C：C^ＣO^:LL^コE^レCT^クO^タR
Ｂ: ベース
B：BASE
JEITA:SC-62
EJ_{JEIAEDJDEEC: C}S:_:C_S-_O6_T2_-89
JEDEC：―
MAXIMUM RATING（Ta=25℃）
SYMBOL
PARAMETER
V_CBO Collector to Base voltage
V_EBO
Emitter to Base voltage
V_CEO Collector to Emitter voltage
I_C
Collector current
I _CM
Peak collector current
P_CM
Collector dissipation(Ta=25℃)
T_j
Junction temperature
T_stg
Storage temperature
RATING
80
10
60
1
2
500
＋150
-55～＋150
UNIT
V
V
V
A
A
mW
℃
℃
MARKING
Type Name
NL
The last number Marking month
of fisical year
Running No.
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
PARAMETER
TEST CONDITIONS
I_CBO
VI(on)
VI(off)
ｈＦＥ1
ｈＦＥ2
ｈＦＥ3
R1
Collector cut off current
Input on voltage
Input off voltage
DC forward current gain1
DC forward current gain2
DC forward current gain3
Input resistor
V_CE=60V，I_E=0
V_CE=0.2V，I_C=0.1A
V_CE=5V，I_C=100μA
V_CE=2V，I_C=0.1A
V_CE=2V，I_C=0.5A
V_CE=2V，I_C=1A
―
LIMITS
MIN TYP MAX
―
―
0.1
―
―
5.0
0.3
―
―
200 ―
―
300 ―
―
200 ―
―
7
10
13
UNIT
μA
V
V
―
―
―
ｋΩ
R2
Emitter-base resistor
―
7
10
13
ｋΩ
ISAHAYA ELECTRONICS CORPORATION