RT8H072E Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – IGBT gate interception circuit

Preliminary
*This is tentative specification.
＜M　F　T＞
RT8H072E
IGBT gate interception circuit
DESCRIPTION
RT8H072E is composed by NPN transistors,
PNP transistors and resistors.
It can miniaturization of a set and reduce parts or
time necessary for completion.
Connected This MFT with the level-shift circuit of IPM,
It can prevent the fault that IGBT gate turn on
at the same time.
OUTLINE DRAWING
FEATURES
●　Miniaturization of a set.
●　Open collector output.
APPLICATION
The protection of IGBT Gate.
PIN CONFIGURATION
①
⑧
②
⑦
③
⑥
④
⑤
Unit：mm
①VCC
②IN
③GND
④N.C.
⑧OUT4
⑦OUT3
⑥OUT2
⑤OUT1
BLOCK DIAGRAM
High ^VCC
LEVEL
VCC
IN
VCC
Low
LEVEL
VCC
VCC
S
Q
R
GND
OUT1
OUT2
OUT3
OUT4
（1／3）
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