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RT6N430C Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE | |||
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DESCRIPTION
RT6N430C is a silicon NPN epitaxial type transistor.
This product is most suitable for muting circuit ,
switching circuit because of low on resistance , small
collector to emitter saturation voltage.
FEATURE
âSmall package for easy mounting.
âHigh reverse hFE
âSmall collector to emitter saturation voltage
VCE(sat)=40mV(TYP.)ï¼@IC=50mA/IB=2.5mAï¼
âLow on Resistance
Ron=0.55Ω(TYP.)ï¼@VI=5Vï¼
ãSMALL-SIGNAL TRANSISITORã
RT6N430C
TRANSISTOR WITH RESISTOR
FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
0.5
2.5
1.5 0.5
Unit : mm
â
â¡
â¢
APPLICATION
muting circuitãswitching circuit
JEITAï¼SC-59
EQUIVALENT CIRCUIT
R1
B
(IN)
C
(OUT)
E
(GND)
TERMINAL CONNECTOR
â ï¼BASE
â¡ï¼EMITTER
â¢ï¼COLLECTOR
MAXIMUM RATINGSï¼Ta=25âï¼
Symbol
Parameter
VCBO
Collector to Base voltage
VEBO
Emitter to Base voltage
VCEO
Collector to Emitter voltage
IC
Collector current
PC
Peak Collector current
Tj
Collector dissipationï¼Total Ta=25âï¼
Tstg
Junction temperature
Ratings
Unit
40
V
40
V
20
V
600
mA
200
mW
+150
â
-55ï½+150 â
ISAHAYA ELECTRONICS CORPORATION
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