RT6N230C Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION
RT6N230C is a silicon NPN epitaxial type transistor.
This product is most suitable for muting circuit ,
switching circuit because of low on resistance , small
collector to emitter saturation voltage.
FEATURE
●Small package for easy mounting.
●High reverse hFE
●Small collector to emitter saturation voltage
VCE(sat)=25mV(TYP.)（@IC=50mA/IB=2.5mA）
●Low on Resistance
Ron=0.55Ω(TYP.)（@VI=5V）
〈SMALL-SIGNAL TRANSISITOR〉
RT6N230C
TRANSISTOR WITH RESISTOR
FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
0.5
2.5
1.5 0.5
Unit : mm
①
②
③
APPLICATION
muting circuit、switching circuit
JEITA：SC-59
EQUIVALENT CIRCUIT
R1
B
(IN)
C
(OUT)
E
(GND)
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
VCBO
Collector to Base voltage
VEBO
Emitter to Base voltage
VCEO
Collector to Emitter voltage
IC
Collector current
PC
Peak Collector current
Tj
Collector dissipation（Total Ta=25℃）
Tstg
Junction temperature
Ratings
Unit
40
V
40
V
20
V
600
mA
200
mW
+150
℃
-55～+150 ℃
ISAHAYA ELECTRONICS CORPORATION