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RT5P234C Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type | |||
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RT5P234C
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
DESCRIPTION
OUTLINE DRAWING
RT5P234C is a one chip transistor with built-in bias
2.8
resistor, NPN type is RT5N234C.
0.65 1.5 0.65
Unit: mm
FEATURE
Built-in bias resistor ï¼R1=2.2kΩ, R2=10kΩï¼
High collector current ï¼Ic=-0.5Aï¼
Mini package for easy mounting
â
â¡
â¢
APPLICATION
Inverted circuit, Switching circuit, Interface circuit,
Driver circuit
R1
B
(IN)
R2
C
JEITAï¼SC-59
(OUT)
JEDECï¼Similar to TO-236
Terminal Connector
â ï¼BASE
E
(GND)
â¡ï¼EMITTER
â¢ï¼COLLECTOR
MAXIMUM RATING (Ta=25â)
SYMBOL
VCBO
VEBO
VIN
VCEO
IC
PC
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Input voltage
Collector to Emitter voltage
Collector current
Collector dissipation(Ta=25â)
Junction temperature
Storage temperature
RATING
-50
-5
-12
-50
-500
200
150
-55ï½ï¼150
UNIT
V
V
V
V
mA
mW
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â)
SYMBOL
V I(on)
V I(off)
VCE(sat)
IBE
ICES
GI
R1
R2/R1
fT
PARAMETER
Input on voltage
Input off voltage
C to E saturation voltage
B to E current
Collector cut off current
DC forward current gain
Input resistor
Resistor ratio
Gain band width product
TEST CONDITION
VCE=-0.3Vï¼IC=-20mA
VCE=-5Vï¼IC=-100µA
IC=-50mAï¼IB=-2.5mA
VBE=-5V
VCE=-50Vï¼VBE=0V
VCE=-5Vï¼IC=-50mA
â
â
VCE=-10Vï¼IE=5mAï¼f=100MHz
MARKING
P .ï¼
MIN
â
-0.3
â
â
â
56
1.54
3.6
â
LIMIT
TYP
â
â
-0.1
â
â
â
2.2
4.5
150
MAX
-2.0
â
-0.3
-3.6
-0.5
â
2.86
5.5
â
UNIT
V
V
V
mA
μA
â
kΩ
â
MHz
ISAHAYA ELECTRONICS CORPORATION
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