RT5P231C Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type

RT5P231C
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
DESCRIPTION
OUTLINE DRAWING _2.8
RT5P231C is a one chip transistor with built-in bias
0.65 1.5 0.65
resistor.
FEATURE
Built-in bias resistor （R1=2.2kΩ, R2=2.2kΩ）
High collector current （Ic=-0.5A）
Mini package for easy mounting
①
②
③
APPLICATION
Inverted circuit, Switching circuit, Interface circuit,
Driver circuit
Unit: mm
R1
B
(IN)
R2
C
(OUT)
E
(GND)
JEITA：SC-59
①：BASE
②：EMITTER
③：COLLECTOR
MAXIMUM RATING (Ta=25℃)
SYMBOL
VCBO
VEBO
VIN
VCEO
IC
PC
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Input voltage
Collector to Emitter voltage
Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
-50
-10
-12
-50
-500
200
150
-55～＋150
UNIT
V
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
V I(on)
V I(off)
VCE(sat)
IBE
ICES
GI
R1
R2/R1
fT
PARAMETER
Input on voltage
Input off voltage
C to E saturation voltage
B to E current
Collector cut off current
DC forward current gain
Input resistor
Resistor ratio
Gain band width product
TEST CONDITION
VCE=-0.3V，IC=-20mA
VCE=-5V，IC=-100µA
IC=-50mA，IB=-2.5mA
VBE=-5V
VCE=-50V，VBE=0V
VCE=-5V，IC=-50mA
―
―
VCE=-10V，IE=5mA，f=100MHz
MARKING
P ^.２
MIN
―
-0.5
―
―
―
39
1.54
0.8
―
LIMIT
TYP
―
―
-0.1
―
―
―
2.2
1
150
MAX
-3
―
-0.3
-3.8
-0.5
―
2.86
1.2
―
UNIT
V
V
V
mA
μA
―
kΩ
―
MHz
ISAHAYA ELECTRONICS CORPORATION