RT5N431C Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – Transistor With Resistor

RT5N431C
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
OUTLINE DRAWING
RT5N431C is a one chip transistor with built-in bias
resistor.






FEATURE
Built-in bias resistor
ʢR1=4.7kЊ, R2=4.7kЊʣ
High collector current
Ê¢Ic=0.5AÊ£
Mini package for easy mounting
ᶃ
ᶄ
ᶅ

APPLICATION
Inverted circuit, Switching circuit, Interface circuit,
Driver circuit
Unit: mm
3
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MAXIMUM RATING (Ta=25ˆ)
SYMBOL
PARAMETER
RATING
VCBO
Collector to Base voltage
50
VEBO
Emitter to Base voltage
-10
30
VCEO
Collector to Emitter voltage
50
IC
Collector current
500
PC
Collector dissipation(Ta=25ˆ)
200
Tj
Junction temperature
Ê´150
Tstg
Storage temperature
-55ʙʴ150


ELECTRICAL CHARACTERISTICS (Ta=25ˆ)
UNIT
V
V
V
mA
mW
ˆ
ˆ
SYMBOL
V I(on)
V I(off)
VCE(sat)
IBE
ICES
GI
R1
R2/R1
fT


PARAMETER
Input on voltage
Input off voltage
C to E saturation voltage
B to E current
Collector cut off current
DC forward current gain
Input resistor
Resistor ratio
Gain band width product
TEST CONDITION
VCE=0.3VɼIC=20mA
VCE=5VɼIC=100ЖA
IC=50mAɼIB=2.5mA
VEB=5V
VCE=50VɼVBE=0V
VCE=5VɼIE=50mA
ʕ
ʕ
VCE=10VɼIE=-5mAɼf=100MHz
MIN
ʕ
0.5
ʕ
ʕ
ʕ
47
3.29
0.8
ʕ
MARKING
/
^. ̏
LIMIT
TYP
ʕ
ʕ
0.1
ʕ
ʕ
ʕ
4.7
1
200
MAX
3
ʕ
0.3
1.8
0.5
ʕ
6.11
1.2
ʕ


UNIT
V
V
V
mA
ЖA
ʕ
kЊ
MHz
ISAHAYA ELECTRONICS CORPORATION