RT5N333C Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type

RT5N333C
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
RT5N333C is a one chip transistor with built-in bias ^{OUTLINE DRAWING}
resistor, PNP type is RT5P333C.
2.8
FEATURE
0.65 1.5 0.65
Built-in bias resistor （R1=3.3kΩ, R2=10kΩ）
High collector current （Ic=0.5A）
①
Mini package for easy mounting
②
③
APPLICATION
Inverted circuit, Switching circuit, Interface circuit,
Driver circuit
Unit: mm
R1
B
(IN)
R2
C
JEITA：SC-59
(OUT)
JEDEC：Similar to TO-236
Terminal Connector
①：BASE
E
(GND)
②：EMITTER
③：COLLECTOR
MAXIMUM RATING (Ta=25℃)
SYMBOL
VCBO
VEBO
VIN
VCEO
IC
PC
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Input voltage
Collector to Emitter voltage
Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
50
6
20
50
500
200
＋150
-55～＋150
UNIT
V
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
V I(on)
V I(off)
VCE(sat)
IBE
ICES
G_I
R1
R2/R1
fT
PARAMETER
Input on voltage
Input off voltage
C to E saturation voltage
B to E current
Collector cut off current
DC forward current gain
Input resistor
Resistor ratio
Gain band width product
TEST CONDITION
V_CE=0.3V，I_C=20mA
V_CE=5V，I_C=100μA
I_C=50mA，I_B=2.5mA
V_BE=5V
V_CE=50V，V_BE=0V
V_CE=5V，I_C=50mA
―
―
V_CE=10V，I_E=-5mA，f=100MHz
MARKING
N ^.8
MIN
―
0.3
―
―
―
56
2.31
2.4
―
LIMIT
TYP
―
―
0.1
―
―
―
3.3
3.0
200
MAX
2
―
0.3
2.4
0.5
―
4.29
3.7
―
UNIT
V
V
V
mA
μA
―
kΩ
―
MHz
ISAHAYA ELECTRONICS CORPORATION