RT5N231C Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type

RT5N231C
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
RT5N231C is a one chip transistor with built-in bias ^{OUTLINE DRAWING}
resistor, PNP type is RT5P231C.
2.8
FEATURE
0.65 1.5 0.65
Built-in bias resistor （R1=2.2kΩ, R2=2.2kΩ）
High collector current （Ic=0.5A）
①
Mini package for easy mounting
APPLICATION
Inverted circuit, Switching circuit, Interface circuit,
Driver circuit
②
③
Unit: mm
R1
B
(IN)
R2
C
JEITA：SC-59
(OUT)
JEDEC：Similar to TO-236
Terminal Connector
①：BASE
E
(GND)
②：EMITTER
③：COLLECTOR
MAXIMUM RATING (Ta=25℃)
SYMBOL
VCBO
VEBO
VIN
VCEO
IC
PC
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Input voltage
Collector to Emitter voltage
Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
50
10
12
50
500
200
＋150
-55～＋150
UNIT
V
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
V I(on)
V I(off)
VCE(sat)
IBE
ICES
G_I
R1
R2/R1
fT
PARAMETER
Input on voltage
Input off voltage
C to E saturation voltage
B to E current
Collector cut off current
DC forward current gain
Input resistor
Resistor ratio
Gain band width product
TEST CONDITION
VCE=0.3V，IC=20mA
VCE=5V，IC=100µA
IC=50mA，IB=2.5mA
VBE=5V
VCE=50V，VBE=0V
VCE=5V，IC=50mA
―
―
VCE=10V，IE=-5mA，f=100MHz
MARKING
N ^.2
MIN
―
0.5
―
―
―
39
1.54
0.8
―
LIMIT
TYP
―
―
0.1
―
―
―
2.2
1
200
MAX
3
―
0.3
3.8
0.5
―
2.86
1.2
―
UNIT
V
V
V
mA
μA
―
kΩ
―
MHz
ISAHAYA ELECTRONICS CORPORATION