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RT5N230C Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type | |||
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PRELIMINARY
RT5N230C
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
OUTLINE DRAWING
RT5N230C is a one chip transistor with built-in bias
resistor, PNP type is RT5P230C.
2.8
0.65 1.5 0.65
FEATURE
Built-in bias resistor ï¼R1=2.2kΩï¼
High collector current ï¼Ic=0.5Aï¼
Mini package for easy mounting
â
â¡
â¢
Unit: mm
APPLICATION
Inverted circuit, Switching circuit, Interface circuit,
Driver circuit
R1
B
(IN)
C JEITAï¼SC-59
(OUT) JEDECï¼Similar to TO-236
Terminal Connector
â ï¼BASE
E
(GND)
â¡ï¼EMITTER
â¢ï¼COLLECTOR
MAXIMUM RATING (Ta=25â)
SYMBOL
VCBO
VEBO
VCEO
IC
PC
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation(Ta=25â)
Junction temperature
Storage temperature
RATING
50
5
50
500
200
150
-55ï½ï¼150
UNIT
V
V
V
mA
mW
â
â
MARKING
N.ï¼
ELECTRICAL CHARACTERISTICS (Ta=25â)
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
ICBO
IEBO
VCE(sat)
GI
R1
fT
C to B break down voltage
C to E break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
C to E saturation voltage
DC forward current gain
Input resistance
Gain band width product
TEST CONDITION
IC=50μA
IC=1mA
IE=50μA
VCB=50V
VEB=4V
IC=50mAï¼IB=2.5mA
VCE=5Vï¼IE=50mA
â
VCE=10Vï¼IE=-50mAï¼f=100MHz
MIN
50
50
5
â
â
â
100
1.54
â
LIMIT
TYP
â
â
â
â
â
â
250
2.2
200
MAX
â
â
â
0.5
0.5
0.3
600
2.86
â
UNIT
V
V
V
μA
μA
V
â
kΩ
MHz
ISAHAYA ELECTRONICS CORPORATION
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