RT5N141S Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type

RT5N141S
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
RT5N141S is a one chip transistor with built-in bias
resistor.
OUTLINE DRAWING
4.0
Unit: mm
FEATURE
Built-in bias resistor （R1=10kΩ, R2=10kΩ）
High collector current （Ic=0.5A）
Mini package for easy mounting
APPLICATION
Inverted circuit, Switching circuit, Interface circuit,
Driver circuit
0.1
0.45
2.5 2.5
①②③
R1
B
(IN)
R2
C _{JEITA：－}
(OUT)
JEDEC：－
Terminal Connector
①：EMITTER
②：COLLECTOR
E
(GND)
③：BASE
MAXIMUM RATING (Ta=25℃)
SYMBOL
VCBO
VEBO
VCEO
VIN
IC
PC
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Input voltage
Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
50
10
50
40
500
600
150
-55～＋150
UNIT
V
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
V I(on)
V I(off)
VCE(sat)
IBE
ICES
GI
R1
R2/R1
fT
PARAMETER
Input on voltage
Input off voltage
C to E saturation voltage
B to E current
Collector cut off current
DC forward current gain
Input resistor
Resistor ratio
Gain band width product
TEST CONDITION
VCE=0.3V，IC=10mA
VCE=5V，IC=100μA
IC=50mA，IB=2.5mA
VBE=5V
VCE=50V，VBE=0V
VCE=5V，IC=50mA
―
―
VCE=10V，IE=-5mA，f=100MHz
MARKING
D14
1 □□
type name
Lot №
MIN
―
0.5
―
―
―
56
7
0.8
―
LIMIT
TYP
―
―
0.1
―
―
―
10
1
200
MAX
3.0
―
0.3
0.88
0.5
―
13
1.2
―
UNIT
V
V
V
mA
μA
―
kΩ
―
MHz
ISAHAYA ELECTRONICS CORPORATION