RT5N140C Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type

PRELIMINARY
RT5N140C
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
OUTLINE DRAWING
2.8
RT5N140C is a one chip transistor with built-in bias
0.65 1.5 0.65
resistor, PNP type is RT5P140C.
Unit: mm
FEATURE
Built-in bias resistor （R1=10kΩ）
High collector current （Ic=0.5A）
Mini package for easy mounting
①
②
③
APPLICATION
Inverted circuit, Switching circuit, Interface circuit,
Driver circuit
R1
B
(IN)
C _{JEITA：SC-59}
(OUT) _{JEDEC：Similar to TO-236}
Terminal Connector
①：BASE
E
(GND)
②：EMITTER
③：COLLECTOR
MAXIMUM RATING (Ta=25℃)
SYMBOL
VCBO
VEBO
VCEO
IC
PC
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
50
5
50
500
200
＋150
-55～＋150
UNIT
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
PARAMETER
ＶCBO
ＶCEO
ＶEBO
ICBO
IEBO
VCE(sat)
GI
R1
fT
C to B break down voltage
C to E break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
C to E saturation voltage
DC forward current gain
Input resistor
Gain band width product
TEST CONDITION
I_C=50μA
I_C=1mA
I_E=50μA
V_CB=50V
V_EB=4V
I_C=50mA，I_B=2.5mA
V_CE=5V，I_E=50mA
―
V_CE=10V，I_E=-50mA，f=100MHz
MARKING
N^.B
MIN
50
50
5
―
―
―
100
7
―
LIMIT
TYP
―
―
―
―
―
―
250
10
200
MAX
―
―
―
0.5
0.5
0.3
600
13
―
UNIT
V
V
V
μA
μA
V
―
kΩ
MHz
ISAHAYA ELECTRONICS CORPORATION