RT3XBBM Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – Composite Transistor

DESCRIPTION
RT3XBBM is a composite transistor with built-in bias resistor
FEATURE
●Built-in bias resistor ( R1=10 KΩ)
●Mini package for easy mounting
APPLICATION
muting circuit、switching circuit
RT3XBBM
Composite Transistor
For Muting Application
Silicon NPN Epitaxial Type
OUTLINE DRAWING
2.1
1.25
①
⑥
②
⑤
③
④
Unit：mm
⑥
RTr1
①
⑤
④
R1
R2
RTr2
R1
②
③
TERMINAL
CONNECTOR
①：EMITTER1
②：BASE1
③：COLLECTOR2
④：EMITTER2
⑤：BASE2
⑥:COLLECTOR1
JEITA：SC-88
MAXIMUM RATINGS （Ta=25℃）（RTr1、RTr2）
Symbol
Parameter
V_CBO
Collector to Base voltage
V_EBO
Emitter to Base voltage
V_CEO
Collector to Emitter voltage
I_C
Collector current
P_C
Collector dissipation（Total Ta=25℃）
T_j
Junction temperature
T_stg
Storage temperature
Ratings
40
40
20
400
150
＋150
-55～＋150
Unit
MARKING
V
V
654
V
mA
mW
.^Ｘ. ^ＢＢ
℃
℃
１23
ISAHAYA ELECTRONICS CORPORATION