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RT3U33M Datasheet, PDF (1/5 Pages) Isahaya Electronics Corporation – Composite Transistor | |||
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PRELIMINARY
RT3U33M
Composite Transistor
For high speed switching
Silicon N-channel + P-channel MOSFET
DESCRIPTION
RT3U33M is a composite transistor built with OUTLINE DRAWING
INK0003AX and INJ0003AX chips in SC-88 package.
2.1
FEATURE
ã»Input impedance is high, and not necessary to consider a drive
electric current.
1.25
â
â¥
ã»Vth is low, and drive by low voltage is possible. Vth=0.6ï½1.2V
â¡
â¤
ã»Low on Resistance. Ron= 0.9 / 2Ω(Tr1/Tr2) TYP
ã»High speed switching.
â¢
â£
ã»Small package for easy mounting.
Unitï¼mm
APPLICATION
high speed switching , Analog switching
*P-channel MOSFET Tr2âs minus sign is omitted
â¥
â¤
â£
Tr.1
Tr.2
â
â¡
â¢
TERMINAL
CONNECTOR
â ï¼SOURCE1
â¡ï¼GATE1
â¢ï¼DRAIN2
â£ï¼SOURCE2
â¤ï¼GATE2
â¥:DRAIN1
JEITAï¼SC-88
MAXIMUM RATING (Ta=25â)
SYMBOL
VDSS
VGSS
ID
PD
Tch
Tstg
PARAMETER
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipationï¼Ta=25âï¼
Channel temperature
Range of Storage temperature
RATING
20
±8
200
150
ï¼125
-55ï½ï¼125
UNIT
V
V
mA
mW
â
â
MARKING
654
.ï¼µ. ï¼ï¼
ï¼23
ISAHAYA ELECTRONICS CORPORATION
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