RT3U11M Datasheet, PDF (1/5 Pages) Isahaya Electronics Corporation – Composite Transistor

PRELIMINARY
RT3U11M
Composite Transistor
For high speed switching
Silicon N-channel + P-channel MOSFET
DESCRIPTION
RT3U11M is a composite transistor built with OUTLINE DRAWING
INK0001AX and INJ0001AX chips in SC-88 package.
2.1
FEATURE
・Input impedance is high, and not necessary to consider a drive
electric current.
1.25
①
⑥
・Vth is low, and drive by low voltage is possible. Vth=0.6～1.2V
②
⑤
・Low on Resistance. Ron= 3.5 / 7Ω(Tr1/Tr2) TYP
・High speed switching.
③
④
・Small package for easy mounting.
Unit：mm
APPLICATION
high speed switching , Analog switching
*P-channel MOSFET Tr2’s minus sign is omitted
⑥
⑤
④
Tr.1
Tr.2
①
②
③
TERMINAL
CONNECTOR
①：SOURCE1
②：GATE1
③：DRAIN2
④：SOURCE2
⑤：GATE2
⑥:DRAIN1
JEITA：SC-88
MAXIMUM RATING (Ta=25℃)
SYMBOL
VDSS
VGSS
ID
PD
Tch
Tstg
PARAMETER
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation（Ta=25℃）
Channel temperature
Range of Storage temperature
RATING
50
±8
100
150
＋125
-55～＋125
UNIT
V
V
mA
mW
℃
℃
MARKING
654
.^Ｕ. ^１１
１23
ISAHAYA ELECTRONICS CORPORATION