RT3TTTM Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type

RT3TTTM
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
DESCRIPTION
RT3TTTM is compound transistor built with RT1N250
chip and RT1P250 chip in SC-88 package.
OUTLINE DRAWING
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
Unit：mm
⑥
⑤
④
RTr1
R1
RTr2
R1
①
②
③
TERMINAL
CONNECTOR
①：EMITTER1
②：BASE1
③：COLLECTOR2
④：EMITTER2
⑤：BASE2
⑥:COLLECTOR1
JEITA：SC-88
MAXIMUM RATING (Ta=25℃) (RTr1_NPN, RTr2_PNP)
SYMBOL
VCBO
VEBO
VCEO
IC
ICM
PC
Tj
Tstg
PARAMETER
RATING
Collector to Base voltage
50
Emitter to Base voltage
6
Collector to Emitter voltage
50
Collector current
100
Peak Collector current
200
Collector dissipation（Total, Ta=25℃）
150
Junction temperature
＋150
Storage temperature
-55～＋150
※PNP built in transistor of ”－”sign is abbreviation.
UNIT
V
V
V
mA
mA
mW
℃
℃
MARKING
654
.^{T T T}
１23
ISAHAYA ELECTRONICS CORPORATION