RT3TGGM Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type

PRELIMINARY
RT3TGGM
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
DESCRIPTION
RT3TGGM is composite transistor built with RT1N432
chip and RT1P432 chip in SC-88 package.
OUTLINE DRAWING
2.1
1.25
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
①
⑥
②
⑤
③
④
Unit：mm
APPLICATION
Inverted circuit, Switching circuit,
Interface circuit, Driver circuit
⑥
⑤
④
RTr1
R1
R2
R2
R1
①
②
RTr2
③
TERMINAL
CONNECTOR
①：EMITTER1
②：BASE1
③：COLLECTOR2
④：EMITTER2
⑤：BASE2
⑥:COLLECTOR1
JEITA：SC-88
JEDEC：－
MAXIMUM RATING (Ta=25℃) (RTr1_NPN, RTr2_PNP)
SYMBOL
VCBO
VEBO
VCEO
VIN
IC
ICM
PC
Tj
Tstg
PARAMETER
RATING
Collector to Base voltage
50
Emitter to Base voltage
7
Collector to Emitter voltage
50
Input voltage
20
Collector current
100
Peak Collector current
200
Collector dissipation（Total）
150
Junction temperature
＋150
Storage temperature
-55～＋150
※PNP built in transistor of ”－”sign is abbreviation.
UNIT
V
V
V
V
mA
mA
mW
℃
℃
MARKING
65 4
.^TGG
１23
ELECTRICAL CHARACTERISTICS (Ta=25℃) (RTr1_NPN, RTr2_PNP)
Symbol
Parameter
Test conditions
Limits
Min
V(BR)CEO
ICBO
IEBO
hFE
VCE(sat)
VI(ON)
VI(OFF)
R1
R2/R1
fT
Collector to Emitter break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input on voltage
Input off voltage
Input resistor
Resistor ratio
Gain band width product
IC=100µA,RBE=∞
VCB =50V,IE=0
VEB =5V,IC=0
VCE=5V,IC=10mA
IC=10mA,IB=0. 5mA
VCE=0.2V,IC=5mA
VCE=5V,IC=100µA
－
－
VCE=6V,IE=10mA
50
－
－
－
255 340
30
－
－
0.1
－
1.0
0.5 0.8
3.3 4.7
1.7 2.1
RTr1 －
200
RTr2 －
150
※PNP built in transistor of ”－”sign is abbreviation.
Max
－
0.1
493
－
0.3
1.8
－
6.1
2.6
－
－
Unit
V
µA
µA
－
V
V
V
kΩ
－
MHZ
ISAHAYA ELECTRONICS CORPORATION