RT3TCCM Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type

PRELIMINARY
RT3TCCM
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
DESCRIPTION
RT3TCCM is composite transistor built with RT1N136
chip and RT1P136 chip in SC-88 package.
OUTLINE DRAWING
2.1
1.25
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
①
⑥
②
⑤
③
④
Unit：mm
APPLICATION
Inverted circuit, Switching circuit,
Interface circuit, Driver circuit
⑥
⑤
④
RTr1
R1
R2
R2
R1
①
②
RTr2
③
TERMINAL
CONNECTOR
①：EMITTER1
②：BASE1
③：COLLECTOR2
④：EMITTER2
⑤：BASE2
⑥:COLLECTOR1
JEITA：SC-88
JEDEC：－
MAXIMUM RATING (Ta=25℃) (RTr1_NPN, RTr2_PNP)
SYMBOL
VCBO
VEBO
VCEO
VIN
IC
ICM
PT
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Input voltage
Collector current
Peak Collector current
Total dissipation
Junction temperature
Storage temperature
RATING
50
6
50
10
100
200
200
＋150
-55～＋150
UNIT
V
V
V
V
mA
mA
mW
℃
℃
MARKING
65 4
.^TCC
１23
※PNP built in transistor of ”－”sign is abbreviation.
ELECTRICAL CHARACTERISTICS (Ta=25℃) (RTr1_NPN, RTr2_PNP)
Symbol
Parameter
Test conditions
Limits
Min
V(BR)CEO
ICBO
IEBO
hFE
VCE(sat)
VI(ON)
VI(OFF)
R1
R2/R1
fT
Collector to Emitter break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input on voltage
Input off voltage
Input resistor
Resistor ratio
Gain band width product
I C=100µA，RBE=∞
VCB=50V，I E =0
VEB=5V，I C =0
VCE=5V，I C =5mA
I C =10mA，I B =0.5mA
VCE=0.2V，I C =5mA
VCE=5V，I C =100µA
－
－
VCE=6V,IE=10mA
50
－
－
－
332 443
33
－
－
0.1
－
0.7
0.4 0.6
0.7 1.0
8
10
RTr1 －
200
RTr2 －
150
※PNP built in transistor of ”－”sign is abbreviation.
Max
－
0.1
642
－
0.3
1.2
－
1.3
12
－
－
Unit
V
µA
µA
－
V
V
V
kΩ
－
MHZ
ISAHAYA ELECTRONICS CORPORATION